Operating Temperature (°C):

-20 to +60

Size of Active Area (mm):

2.4 x 2.4

Storage Temperature (°C):

-55 to +80

Rise Time (μs):

0.5 @ 0 V, 1 kΩ

Responsivity @ 980nm (A/W):

0.36

Shunt Resistance @ V=-10mV (GΩ):

Minimum: 2
Typical: 20

Responsivity @ 633nm (A/W):

0.34

Responsivity @ 200nm (A/W):

0.12

Capacitance @ V_R=0V (pF):

140.00

Active Area (mm²):

5.7

Noise Equivalent Power NEP (W/ Hz^1/2):

8.2 x 10^-15 @ 0 V, 200nm

Maximum Reverse Voltage (V):

5.00

Connector:

TO-5

Peak Response Wavelength (nm):

720.00

RoHS:

Compliant

Certificate of Conformance:

View

深紫外線光電二極體非常適用於多種應用，包括紫外線分光光度測量法與分析及醫療設備。深紫外線光電二極體經過精心設計，可增強200 – 400nm範圍內的回應能力，並將敏感度拓展至190nm。深紫外線光電二極體具有石英窗鏡，並採用金屬或陶瓷外罩。此外，我們也提供近紅外效能受抑制的機型。

5.7mm2 Suppressed NIR DUV Photodiode w/Metal Housing

5.7mm² Suppressed NIR DUV Photodiode w/Metal Housing