1mm Dia., Four-Element Segmented InGaAs Photodiode

#17-077, 1mm Dia., Four-Element Segmented InGaAs Photodiode

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Stock #17-077 5-7 Days
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NT$9,975
Qty 1-4
NT$9,975
Qty 5+
NT$8,925
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下載產品資料
Operating Temperature (°C):
-40 to +75
Size of Active Area (mm):
1 Dia.
Storage Temperature (°C):
-55 to +125
Responsivity @ 1310nm (A/W):
0.85 minimum / 0.9 typical
Responsivity @ 1550nm (A/W):
0.9 minimum / 0.95 typical
Rise/ Fall Time @ VR=5V (ns):
3 (typical)
Capacitance @ VR=5V (pF):
25
Noise Equivalent Power NEP (W/ Hz1/2):
1.20 x 10-14 @ 1550nm
Maximum Reverse Voltage (V):
15
Connector:
TO-5
Dark Current @ VR=5V (nA):
Maximum: 15 Typical: 0.5
Element Gap (mm):
0.045

Regulatory Compliance

RoHS:
Certificate of Conformance:

產品系列說明

分段式 InGaAs 光電二極體具備大型有效區域,並分為四個個別元素。本系列光電二極體的四個元素,具備高度回應均勻性及低串擾等特性,可在準確歸零或定心應用中使用。本系列光電二極體在時間和溫度方面都可維持穩定,提供 900 - 1700nm 的回應能力,並在 1100 - 1620nm 具備優異的回應能力。分段式 InGaAs 光電二極體適用於位置偵測、光束對準,以及近紅外線光譜的光束輪廓描繪應用。每個光電二極體都封裝於隔離的 TO-5 或 TO-8 罐之中,並採用抗反射鍍膜窗鏡以提升光通量。

 
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